1997. 10. 28 1/3 semiconductor technical data t8a6ci bi-directional triode thyristor 8a mold triac revision no : 2 ac power control application. features repetitive peak off-state voltage : v drm =600v. r.m.s on-state current : i t(rms) =8a. high commutaing (dv/dt) isolation voltage : v isol =1500v ac (ul recognized : e166398) applications switching mode power supply speed control of small motors solid state relay light dimmer washing machine temperature control of heater dim millimeters 1. t1 2. t2 3. gate to-220is 10.30 max 15.30 max 2.70 y 0.30 0.85 max x 3.20 y 0.20 3.00 y 0.30 a b c d e f g 12.30 max 0.75 max h 13.60 y 0.50 3.90 max 1.20 1.30 2.54 4.50 y 0.20 6.80 2.60 y 0.20 10 ? j k l m n o p q r f o q 1 2 3 l p n b g j m d n t t h e r t v s k l u t s 0.5 5 ^ 25 ^ 2.60 y 0.15 v u d a c maximum ratings (ta=25 1 ) characteristic symbol rating unit non-repetitive peak off-state voltage v dsm 700 v repetitive peak off-state voltage v drm 600 v r.m.s on-state current (full sine waveform tc=89 1 ) i t(rms) 8 a peak one cycle surge on-state current (non-repetitive) i tsm 80 (50hz 1 cycle) 88 (60hz 1 cycle) a i 2 t limit value (1ms # t # 10ms) i 2 t 32 a 2 s peak gate power dissipation p gm 5 w average gate power dissipation p g(av) 0.5 w peak gate voltage v gm 10 v peak gate current i gm 2 a junction temperature t j -40 125 1 storage temperature range t stg -40 125 1 isolation voltage (ac, t=1min.) v isol 1500 v
1997. 10. 28 2/3 t8a6ci revision no : 2 electrical characteristics (ta=25 1 ) characteristic symbol test condition min. typ. max. unit repetitive peak off-state current i drm v drm =rated - - 20 a gate trigger voltage ? v gt v d =12v, r l =20 u t 2 (+), gate(+) - - 1.5 v ? t 2 (+), gate(-) - - 1.5 ? t 2 (-), gate(-) - - 1.5 ? t 2 (-), gate(+) - - - gate trigger current ? i gt t 2 (+), gate(+) - - 30 ma ? t 2 (+), gate(-) - - 30 ? t 2 (-), gate(-) - - 30 ? t 2 (-), gate(+) - - - peak on-state voltage v tm i tm =12a - - 1.5 v gate non-trigger voltage v gd v d =rated, tc=125 1 0.2 - - v holding current i h v d =12v, i tm =1a - - 50 ma critical rate of rise of off-state voltage d v /d t t j =125 1 , v drm =rated exponential rise - 300 - v/ s critical rate of rise of off-state voltage at commutation (d v /d t )c t j =125 1 , (di/dt)c=-4.5a/ms, v d =2/3v drm 10 - - v/ s thermal resistance r th(j-c) junction to case, ac - - 3.6 1 /w
1997. 10. 28 3/3 t8a6ci revision no : 2 r.m.s on-state current i (a) t(rms) t(rms) t(av) p - i r.m.s on-state current i (a) t(rms) t(rms) ta max - i instantaneous on-state voltage (v) t tt number of cycles at 60hz surge on-state current(60hz) surge on current (a) transient thermal impedance instantaneous on-state current (a) t maximum allowable ambient temperature ta max ( c) temperature tc max ( c) maximum allowable case t(rms) r.m.s on-state current i (a) tc max - i t(rms) dissipation p (w) average on-state power t(av) transient thermal impedance r ( c-w) th(j-c) - time number of cycles at 60hz instantaneous gate voltage v (v) g instantaneous gate current i (ma) g gate trigger characteristic 10 10 1 0 10 10 -1 12 10 10 3 25 c peak gate pea k gate ave r a ge ga t e dis s i pa t io n gate trigger voltage gate non trigger voltage dissi pation voltage current peak gate 1.8 1.4 1.0 0.6 2.2 2.6 3.0 t =25 c j 10 0 10 1 10 2 60 100 120 140 20 0 40 80 3.0 2.5 2.0 0 0.5 1.0 1.5 125 10 20 30 40 50 60 70 80 90 0 100 time 10 021 10 10 48 0 80 40 0 20 140 120 100 60 12 0.8 1.6 1.2 0.4 4.0 3.6 3.2 2.8 2.4 0 2.0 10 -1 3 10 1 10 0 10 2 10 6 4 2 08 10 0 12 2 10 4 6 8 (junction to case)
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